Electron statistics and cluster formation in CdF2 semiconductors with DX-centers
Identifieur interne : 000256 ( Russie/Analysis ); précédent : 000255; suivant : 000257Electron statistics and cluster formation in CdF2 semiconductors with DX-centers
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Abstract
Equilibrium statistical and nonequilibrium photo-induced distributions of electrons over the levels of CdF2:DX were studied as function of the temperature. Optical, conductivity, as well as 113Cd and 19F nuclear spin-lattice relaxation data were taken into consideration. The heights of the tunneling barriers separating deep and shallow states of bistable DX-centers formed in CdF2 by Ga and In dopants, as well as the ionization energy of the deep states were determined for both dopants. CdF2:Ga semiconductors proved to have very high degree of compensation by interstitial F-ions, K> 0.996. Most Ga ions are located in expanded ordered structures (clusters), and may form only shallow one-electron states. Features of these structures result in very narrow impurity band (<0.02eV) at Ga concentrations up to ∼1020cm-3, which is responsible for the CdF2:Ga 'free electron' conductivity. The remaining less than 1 % of all Ga ions are placed into the 'cluster free' regions of the crystal, and form DX-centers where each center can bind either one, or two electrons. In CdF2:In, an increase of In content up to ∼1019cm-3 and above results in cluster formation. In contrast with Ga, In ions in clusters form only deep, two-electron states. At high In-doping level (> 1 mol%), the concentration of DX-centers (located in the 'cluster free' regions of the crystal) is very small.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electron statistics and cluster formation in CdF<sub>2</sub> semiconductors with DX-centers</title><author><name sortKey="Kazanskii, S A" uniqKey="Kazanskii S">S. A. Kazanskii</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>St. Petersburg State University of Information Technologies, Mechanics and Optics</s1><s2>St. Petersburg 197101</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 197101</wicri:noRegion></affiliation></author><author><name sortKey="Shcheulin, A S" uniqKey="Shcheulin A">A. S. Shcheulin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>St. Petersburg State University of Information Technologies, Mechanics and Optics</s1><s2>St. Petersburg 197101</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 197101</wicri:noRegion></affiliation></author><author><name sortKey="Ryskin, A I" uniqKey="Ryskin A">A. I. Ryskin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>St. Petersburg State University of Information Technologies, Mechanics and Optics</s1><s2>St. Petersburg 197101</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 197101</wicri:noRegion></affiliation></author><author><name sortKey="Sobolev, N A" uniqKey="Sobolev N">N. A. Sobolev</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A.F. Ioffe Physico-Technical Institute of RAS</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A.F. Ioffe Physico-Technical Institute of RAS</wicri:noRegion></affiliation></author><author><name sortKey="Hilger, D" uniqKey="Hilger D">D. Hilger</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Oregon State University</s1><s2>Corvallis, OR 97331-6501</s2><s3>USA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Oregon State University</wicri:noRegion></affiliation></author><author><name sortKey="Warren, W W Jr" uniqKey="Warren W">W. W. Jr Warren</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Oregon State University</s1><s2>Corvallis, OR 97331-6501</s2><s3>USA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Oregon State University</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0047806</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 08-0047806 INIST</idno><idno type="RBID">Pascal:08-0047806</idno><idno type="wicri:Area/Main/Corpus">006F91</idno><idno type="wicri:Area/Main/Repository">007A75</idno><idno type="wicri:Area/Russie/Extraction">000256</idno></publicationStmt><seriesStmt><idno type="ISSN">0921-4526</idno><title level="j" type="abbreviated">Physica, B Condens. matter</title><title level="j" type="main">Physica. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium fluoride</term><term>Compensation</term><term>Defect states</term><term>Donor center</term><term>Doping</term><term>Electrical conductivity</term><term>Gallium additions</term><term>Indium additions</term><term>Ionization potential</term><term>Nuclear magnetic resonance</term><term>Optical spectrum</term><term>Semiconductor materials</term><term>Spin-lattice relaxation</term><term>Tunnel effect</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Centre donneur</term><term>Conductivité électrique</term><term>Résonance magnétique nucléaire</term><term>Relaxation spin réseau</term><term>Effet tunnel</term><term>Etat défaut</term><term>Dopage</term><term>Potentiel ionisation</term><term>Compensation</term><term>Addition gallium</term><term>Addition indium</term><term>Spectre optique</term><term>Fluorure de cadmium</term><term>Semiconducteur</term><term>CdF2</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Equilibrium statistical and nonequilibrium photo-induced distributions of electrons over the levels of CdF<sub>2</sub>:DX were studied as function of the temperature. Optical, conductivity, as well as <sup>113</sup>Cd and <sup>19</sup>F nuclear spin-lattice relaxation data were taken into consideration. The heights of the tunneling barriers separating deep and shallow states of bistable DX-centers formed in CdF<sub>2</sub> by Ga and In dopants, as well as the ionization energy of the deep states were determined for both dopants. CdF<sub>2</sub>:Ga semiconductors proved to have very high degree of compensation by interstitial F<sup>-</sup>ions, K> 0.996. Most Ga ions are located in expanded ordered structures (clusters), and may form only shallow one-electron states. Features of these structures result in very narrow impurity band (<0.02eV) at Ga concentrations up to ∼10<sup>20</sup>cm<sup>-3</sup>, which is responsible for the CdF<sub>2</sub>:Ga 'free electron' conductivity. The remaining less than 1 % of all Ga ions are placed into the 'cluster free' regions of the crystal, and form DX-centers where each center can bind either one, or two electrons. In CdF<sub>2</sub>:In, an increase of In content up to ∼10<sup>19</sup>cm<sup>-3</sup> and above results in cluster formation. In contrast with Ga, In ions in clusters form only deep, two-electron states. At high In-doping level (> 1 mol%), the concentration of DX-centers (located in the 'cluster free' regions of the crystal) is very small.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-4526</s0></fA01><fA03 i2="1"><s0>Physica, B Condens. matter</s0></fA03><fA05><s2>401-02</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Electron statistics and cluster formation in CdF<sub>2</sub> semiconductors with DX-centers</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 24th International Conference on Defects in Semiconductors ICDS-24, Held in Albuquerque, NM, USA, 22-27 July 2007</s1></fA09><fA11 i1="01" i2="1"><s1>KAZANSKII (S. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>SHCHEULIN (A. S.)</s1></fA11><fA11 i1="03" i2="1"><s1>RYSKIN (A. I.)</s1></fA11><fA11 i1="04" i2="1"><s1>SOBOLEV (N. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>HILGER (D.)</s1></fA11><fA11 i1="06" i2="1"><s1>WARREN (W. W. JR)</s1></fA11><fA12 i1="01" i2="1"><s1>ESTREICHER (Stefan K.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>HOLTZ (Mark W.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>SEAGER (Carleton H.)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>WRIGHT (Alan F.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>St. Petersburg State University of Information Technologies, Mechanics and Optics</s1><s2>St. Petersburg 197101</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>A.F. Ioffe Physico-Technical Institute of RAS</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Oregon State University</s1><s2>Corvallis, OR 97331-6501</s2><s3>USA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA15 i1="01"><s1>Physics Department, Texas Tech University, Mail Stop 1051</s1><s2>Lubbock, TX 79409</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA15><fA15 i1="02"><s1>Sandia National Laboratories</s1><s3>USA</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA15><fA20><s1>282-285</s1></fA20><fA21><s1>2007</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>145B</s2><s5>354000174277590660</s5></fA43><fA44><s0>0000</s0><s1>© 2008 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>10 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>08-0047806</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Equilibrium statistical and nonequilibrium photo-induced distributions of electrons over the levels of CdF<sub>2</sub>:DX were studied as function of the temperature. Optical, conductivity, as well as <sup>113</sup>Cd and <sup>19</sup>F nuclear spin-lattice relaxation data were taken into consideration. The heights of the tunneling barriers separating deep and shallow states of bistable DX-centers formed in CdF<sub>2</sub> by Ga and In dopants, as well as the ionization energy of the deep states were determined for both dopants. CdF<sub>2</sub>:Ga semiconductors proved to have very high degree of compensation by interstitial F<sup>-</sup>ions, K> 0.996. Most Ga ions are located in expanded ordered structures (clusters), and may form only shallow one-electron states. Features of these structures result in very narrow impurity band (<0.02eV) at Ga concentrations up to ∼10<sup>20</sup>cm<sup>-3</sup>, which is responsible for the CdF<sub>2</sub>:Ga 'free electron' conductivity. The remaining less than 1 % of all Ga ions are placed into the 'cluster free' regions of the crystal, and form DX-centers where each center can bind either one, or two electrons. In CdF<sub>2</sub>:In, an increase of In content up to ∼10<sup>19</sup>cm<sup>-3</sup> and above results in cluster formation. In contrast with Ga, In ions in clusters form only deep, two-electron states. At high In-doping level (> 1 mol%), the concentration of DX-centers (located in the 'cluster free' regions of the crystal) is very small.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70A55H</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Centre donneur</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Donor center</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Centro dador</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Résonance magnétique nucléaire</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Nuclear magnetic resonance</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Relaxation spin réseau</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Spin-lattice relaxation</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Effet tunnel</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Tunnel effect</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etat défaut</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Defect states</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Dopage</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Doping</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Doping</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Potentiel ionisation</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Ionization potential</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Compensation</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Compensation</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Addition gallium</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Gallium additions</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Addition indium</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium additions</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Spectre optique</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Optical spectrum</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Espectro óptico</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Fluorure de cadmium</s0><s5>15</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Cadmium fluoride</s0><s5>15</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Cadmio fluoruro</s0><s5>15</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>16</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>16</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>CdF2</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>021</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>ICDS-24 International Conference on Defects in Semiconductors</s1><s2>24</s2><s3>Albuquerque, NM USA</s3><s4>2007-07-22</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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